期刊介绍
The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
投稿要求
CITESCORE
CiteScore SJR SNIP CiteScore排名
4.90 0.533 1.223 学科 分区 排名 百分位
大类:Engineering
小类:Safety, Risk, Reliability and Quality Q2 66 / 235 72%
大类:Engineering
小类:Electrical and Electronic Engineering Q2 299 / 970 69%
大类:Engineering
小类:Electronic, Optical and Magnetic Materials Q2 117 / 305 61%
WOS期刊JCR分区
WOS分区等级:
3区| 按JIF指标学科分区 | 收录子集 | JIF分区 | JIF排名 | JIF百分位 |
| 学科:ENGINEERING, ELECTRICAL & ELECTRONIC | SCIE | Q3 | 197/366 |
|
| 学科:PHYSICS, APPLIED | SCIE | Q3 | 114/187 |
|
| 按JCI指标学科分区 | 收录子集 | JCI分区 | JCI排名 | JCI百分位 |
| 学科:ENGINEERING, ELECTRICAL & ELECTRONIC | SCIE | Q3 | 191/366 |
|
| 学科:PHYSICS, APPLIED | SCIE | Q3 | 101/187 |
|
期刊分区表预警名单
2025年03月发布的2025版:不在预警名单中
2024年02月发布的2024版:不在预警名单中
2023年01月发布的2023版:不在预警名单中
2021年12月发布的2021版:不在预警名单中
2020年12月发布的2020版:不在预警名单中
中科院2025年3月升级版
点击查看中国科学院期刊分区趋势图| 大类学科 | 小类学科 | Top期刊 | 综述期刊 |
|---|
| 工程技术 2区3区3区 | ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 | 2区1区3区 | PHYSICS, APPLIED 物理:应用 | 2区2区3区 |
| 否 | 否 |
中科院2023年12月旧的升级版
| 大类学科 | 小类学科 | Top期刊 | 综述期刊 |
|---|
| 工程技术 1区3区1区 | ENGINEERING, ELECTRICAL & ELECTRONIC 工程:电子与电气 | 1区1区3区 | PHYSICS, APPLIED 物理:应用 | 2区4区3区 |
| 否 | 否 |